国家/地区 台湾（5）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B021/064（5）
发明人 ALSHARAEH E（2） ALTHUBAITI N（2） ARSALAN M（2）
BAYHAN Z（2） MUSSA Y（2） SONG J（2）
SUNG C（2）
公开年 2021（3）
申请年 2020（2） 
专利权人 SAUDI ARABIA.（2） SONG J（2） SUNG C（2）

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Preparing nanoparticle/graphene/boron nitride (BN) nanocomposite for preparing electrode for lithium-ion battery and rechargeable battery, by ball-milling mixture comprising metal salt, graphene and boron nitride, and calcining mixture.

ARSALAN M, ALSHARAEH E, MUSSA Y, ALTHUBAITI N, BAYHAN Z, MOUSSA Y

Nanocomposite used for forming electrode for supercapacitor, comprises two-dimensional layers of carbon material and two-dimensional layers of hexagonal boron nitride material, and has preset thermal stability.

ARSALAN M, ALSHARAEH E, ALTHUBAITI N, BAYHAN Z, MUSSA Y

Electronic device useful as e.g. electronic display, comprises graphene layer, planar hexagonal boron nitride layer operably associated with graphene layer, power source, phosphor layer, and metal atoms intercalated in boron nitride layer.

SUNG C, SONG J

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J