国家/地区 日本（2）
IPC部 B（2）
IPC大类 B82（2） C01（2）
IPC小类 B82Y（2）
IPC B82Y040/00（2）
发明人
公开年
申请年 2012（2）
专利权人

Preparing a semiconductor substrate, useful for forming a multilayer article, comprises forming a metal film on the substrate, contacting metal film surface with a carbon-containing gas and precipitating carbon atoms to form graphene layer.

SEACRIST M R, BERRY V

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G