国家/地区 中国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B032/158（2）
发明人
公开年
申请年 2015（2）
专利权人

Method for forming e.g. drain contacts for e.g. graphene FET, involves forming grown-in graphitic interface layer at interface between source and graphene surface source contacts and drain contact and graphene surface drain contact.

COLOMBO L, VENUGOPAL A

Carbon material used for manufacture of resin compound material, comprises volatile component having graphene structure and volatilized at preset temperature.

SAWA K, HAMADA T, MUKOHATA D, INUI N