国家/地区 中国（2）
IPC部 B（2）
IPC大类 C01（2） C23（2） H01（2）
IPC小类 C01B（2）
IPC C01B032/182（2）
发明人
公开年
申请年 2015（2）
专利权人

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Method for forming workpiece of e.g. electronic device, involves removing layer of material on top of graphene surface in predetermined pattern, and releasing graphene from catalytic film such that graphene is in form of patterned layer.

JOHNSON A T, GUDIBANDE R R, QI Z J, JOHNSON A, GUDIBANDE R, QI Z