国家/地区 韩国（2）
IPC部 C（2）
IPC大类 C01（2） C23（2）
IPC小类 C01B（2）
IPC C01B031/02（2）
发明人
公开年 2014（2）
申请年 2012（2）
专利权人

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Manufacture of graphene involves forming substrate, growing silica layer on substrate, growing crystalline phase silicon carbide film on silica layer, depositing nickel layer, heat-treating substrate and cooling substrate.

CHUNG G S