国家/地区 中国（4） 美国（2） 世界知识产权组织（2）
IPC部 B（5）
IPC大类 C01（5） C23（5） B32（2）
B82（2） H01（2）
IPC小类 C01B（5）
IPC C23C016/448（5）
发明人 DUAN Y（2） HUANG D（2） LI X（2）
LI Z（2） SHAO L（2） SHI H（2）
ZHANG Y（2）
公开年 2022（2）
申请年 2022（2） 
专利权人 CHINESE ACAD.（2） CHONGQING GR.（2）

Preparation device of metal layered graphene on solid carbon source, has heat compression chamber that is provided with auxiliary gas path mechanism introducing auxiliary gas into sample chamber, growth chamber and compression chamber.

SHAO L, LI X, ZHANG Y, LI Z, HUANG D, SHI H, DUAN Y

Preparing graphene metal layered composite material useful in aerospace industry, aviation industry and information industry, comprises pre-treating solid carbon source, growing graphene on many metal substrates and hot-pressing many graphene metal substrates.

SHAO L, LI X, ZHANG Y, LI Z, HUANG D, SHI H, DUAN Y

Preparing graphene/metal composite powder involves heating carbon-containing free radicals obtained by hot filament cracking to react with metal powder in a fluidized bed, lowering temperature to grow graphene on the fluidized metal powder.

DAI D, YANG K, LIN Z, JIANG N, MA H

Coating surfaces of different substrates with covalently-bonded graphenes comprises thermal expansion and floating of graphene, graphene oxide or graphite materials in the presence of silicon- or cyano-containing polymers.

LEE L J, HUANG W, YU J, LEE L

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K