国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5） B21（2） B30（2）
C22（2）
IPC小类 C01B（5）
IPC C01B032/186（5）
发明人 XU X（5）
公开年 2022（5）
申请年 2022（5）
专利权人 CHINESE ACAD.（4） CHONGQING GR.（4）

Method for preparing single-layer alternating graphene, involves placing copper foil in gas phase deposition furnace, introducing argon gas into gas phase deposition furnace, and introducing hydrogen into gas phase deposition furnace and annealing copper foil.

ZHANG X, ZHOU T, XU X

Growth forging split device for graphene metal composite material, comprises growth chamber, forging chamber and transfer mechanism for transferring metal material, where growth chamber and forging chamber are inside with heating system.

SHAO L, HUANG D, DUAN Y, JIANG H, MA J, XU X, SHI H, LI X, YU J

Integrated production device of metal conductive graphene, has integrated growth mold pressing chamber that is provided with heating system, heat compression mold and fixture metal material, and fixture is located between male and female molds.

SHAO L, HUANG D, DUAN Y, JIANG H, MA J, YU J, LI X, SHI H, XU X

Production graphene of metal conductive material comprises forming and pressing, where step of graphene and step of molding pressing are carried out in same chamber.

SHAO L, HUANG D, DUAN Y, JIANG H, MA J, YU J, XU X, LI X, SHI H

Growing and rolling graphene-enhanced high-conductivity metal material involves carrying out graphene growth and roll formation in the same chamber.

SHAO L, HUANG D, DUAN Y, JIANG H, MA J, YU J, XU X, LI X, SHI H