国家/地区 韩国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人
公开年 2023（2）
申请年
专利权人 BASIC SCI INST（2）

Preparing graphene useful in transistor, comprises supplying substituted alkyne based precursor to chamber including first zone and second zone, vaporizing or sublimating precursor in first zone, and depositing sublimed precursor.

LEE H Y, SEO S, CHOI J, LEE H

Manufacturing graphene useful in devices and laminate comprises growing graphene on single-crystal metal foil by supplying gaseous carbon source to single-crystal metal foil and exfoliating the graphene from single-crystal metal foil.

RUOFF R S, WANG M, DARUO