国家/地区 中国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B032/184（2）
发明人 ZHANG C（2）
公开年
申请年
专利权人

Preparing patterned graphene, comprises forming accommodating passage in silicon carbide base, providing catalyst and insulating substrate, placing catalyst in accommodating passage, and placing sandwich structure in heating device.

GAO B, ZHANG C, GU J, WU T, ZHU H

Preparing graphene porous carbon material, comprises e.g. adding graphene-based component or mixture of graphene based component and auxiliary component in solvent to disperse, and placing the obtained original sol in reactor for reacting.

KANG F, LI B, LV W, TAO Y, YANG Q, YOU C, ZHANG C, HONG F, YAO Y