国家/地区 美国（3） 世界知识产权组织（3） 欧洲专利局（EPO）（2）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/04（3）
发明人
公开年 2016（3）
申请年 2015（3）
专利权人

Synthesizing graphene involves annealing substrate in hydrogen gas atmosphere, subsequently undertaking deposition and nucleation step where relatively thick carbon layer is deposited onto substrate, and undertaking graphene growth step.

BOINTON T H, BARNES M D, RUSSO S, CRACIUN M, HARDISTY BOINTON T

Forming a graphene device, used to form sensor device, comprises forming a graphene film over a substrate, depositing a polymer material covering a surface of the film, by gas phase deposition, and removing the substrate from the film.

KALITA D, BOUCHIAT V, MARTY L, BENDIAB N

Method for preparing graphene conductive film for flexible touch device, involves growing graphene layer on metal-catalyzed base, and coating polyamic acid solution layer on graphene layer, where polyimide film is formed by thermal curing.

DI Y