国家/地区 美国（5）
IPC部 C（5）
IPC大类 C01（5） C30（5） B82（2）
H01（2）
IPC小类 C01B（5）
IPC C01B031/04（5）
发明人
公开年 2014（5）
申请年 2013（3）  2014（2） 
专利权人

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L

Growing graphene used e.g. in graphene material, comprises annealing metal substrate up to growth temperature for annealing time period and in presence of non-reducing gas, and introducing gas mixture to grow graphene over the substrate.

DUAN X, ZHOU H

Graphene dendrites formed by starting with graphene nuclei on solid surface extending outwardly into primary branches from which many secondary branches extend, used to form graphene plates used in e.g. photonic and electronic parts.

TZENG Y H, TZENG Y

Forming single-crystal grapheme for fabricating e.g. photovoltaic devices involves cleaning and annealing the surface of catalyst, applying carbon source to surface of catalyst, and growing single-crystal graphene on surface of catalyst.

TOUR J M, YAN Z