国家/地区 日本（2） 美国（2）
IPC部 B（3）
IPC大类 B82（3）
IPC小类 B82Y（3）
IPC B82Y030/00（3）
发明人 YAMAGUCHI J（2）
公开年
申请年 2019（3）
专利权人 FUJITSU LTD（2）

Graphene quantum dot apparatus for e.g., photoelectric conversion device, has substrate and graphene quantum dots on substrate, with each quantum dot having armchair-type first edge parallel to first direction and armchair-type second edge.

YAMAGUCHI J

Forming graphene layer for e.g., LEDs, by mixing carbon source with horizontally oriented molten solvent, precipitating carbon source to form graphite layer across molten solvent, and separating graphite layer into a set of graphene layers.

SUNG C, HU S C, LIN I, YU C

Graphene nanoribbon precursor for use in graphene nanoribbon that is utilized in electronic device for channel of FET and resonant tunneling diode, comprises substituted terphenyl compound.

YAMAGUCHI J