国家/地区 土耳其（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人 OZKAN M（2）
公开年 2014（2）
申请年 2013（2） 
专利权人 UNIV CALIFOR.（2）

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Analyzing graphene for e.g. solar cells, electronic systems on printed circuit boards and semiconductor devices, comprises performing fluorescence quenching microscopy on graphene sample to identify graphene layers on arbitrary substrate.

OZKAN C S, OZKAN M, KYLE J R