国家/地区
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B032/186（2）
发明人
公开年 2023（2）
申请年 2021（2） 
专利权人

Method for fabricating two-dimensional channel transistor involves growing hexagonal-boron nitride layer on substrate, selectively etching hexagonal-boron nitride layer by exposing hexagonal-boron nitride layer to sulfur hexafluoride plasma gas, and treating etched layer in potassium hydroxide.

SHRIVASTAVA M, RAWAT J S, MEERSHA A

Use of nitrogen-doped graphene metal material in heat-conducting field where nitrogen-doped metal graphene comprises metal base material and nitrogen-doped graphene.

WU Q, MA Y