国家/地区 中国（2）
IPC部 C（2） H（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/02（2）
发明人
公开年
申请年
专利权人

Forming recrystallized metal layer for growing graphene monolayer involves forming metal layer on substrate; forming layer of dielectric material on the metal layer; and directionally recrystallizing the metal layer.

YAGER T A

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V