国家/地区 韩国（3）
IPC部 C（3）
IPC大类 C25（3） C01（2） H01（2）
IPC小类 C25D（3）
IPC C25D009/04（3）
发明人
公开年 2018（3）
申请年 2016（2） 
专利权人

Preparing metal oxide-doped graphene used for field effect transistor, and in p-type semiconductor, comprises e.g. depositing graphene on first substrate, and transferring deposited graphene onto second substrate to form graphene electrode.

KYU K E, SOO P C

Production of graphene used in e.g. sensor, involves exfoliating working electrode of electrochemical cell containing aqueous electrolyte comprising exfoliating ions, to produce graphene having specified engineered characteristics.

CHAKI N K, DAS B, DEVARAJAN S, SARKAR S, RAUT R, SINGH B, PANDHER R, KHASELEV O, DIFFARAJAN S, LAUT R, PANDE R, COSERLEF O

Manufacture of reduced graphene oxide-titanium dioxide nanotube structure for photocatalyst, involves forming reduced graphene oxide film on substrate, growing titanium dioxide nanotubes, and forming titanium dioxide particles on resultant.

IN S I, ABDUL R