国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B025/18（3） C30B025/16（2） C30B029/02（2）
发明人 LIU Z（2）
公开年 2022（3）
申请年 2022（2） 
专利权人 UNIV PEKING（3）

Preparing gallium nitride single crystal substrate utilizing edge metal mask technology, comprises e.g. providing gallium nitride epitaxial film with nitrogen lattice polarity without biaxial stress, heating hydride vapor phase epitaxy cavity and trimming gallium nitride single crystal thick film.

ZHANG G, SHEN B, WU J, WANG T, GUO Y, LIU Q, LIU F, WANG X

Preparation method of a large domain graphene single crystal, involves annealing sapphire/metal substrate with oxygen-containing gas and providing growth gas according to mode of increasing proportion gradient of growth gas, and growing on sapphire/metal substrate to obtain graphene single crystal.

LIU Z, PENG H, CAO Y, WANG Y, DU Y, TANG J, YAN R

Controlling grain boundary angle of two-dimensional material, involves providing substrate with specific crystal orientation and growing two-dimensional material by chemical vapor deposition on substrate.

LIN L, SUN L, LIU H, LI Y, LIU Z