国家/地区 中国（2）
IPC部 C（2）
IPC大类 C23（2）
IPC小类 C23C（2）
IPC C30B025/18（2）
发明人
公开年 2022（2）
申请年
专利权人

Epitaxial gallium nitride (GaN) with diamond as substrate comprises diamond substrate, single-layer or multi-layer graphene layer arranged on diamond substrate, aluminum nitride layer sputtered on graphene layer, and gallium nitride thin film epitaxially grown on aluminum nitride.

LI X, ZHANG F

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J