国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B025/18（2）
发明人
公开年
申请年 2021（2）
专利权人

Visible-near infrared wide spectrum photoelectric detector is independent device and/or integrated in circuit, and contains flexible substrate, transparent conductive electrode, active layer, p-type ohmic contact layer, upper electrode layer, and silicon nitride passivation layer.

CHEN H, WANG W, DENG Z, LI X, JIA H

Preparing silicon nitride single crystal involves providing silicon carbide substrate, and disposing multilayer graphene an insertion layer on silicon carbide substrate to obtain graphene/silicon carbide substrate.

WANG Y, XU Y, WANG J, XU K