国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2） H01（2）
IPC小类 C30B（2）
IPC C30B025/18（2）
发明人
公开年 2022（2）
申请年 2021（2） 
专利权人

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J

Preparing high-quality third-fifth compound substrate used in photoelectronic device, photoelectric integration, ultra-high-speed microelectronic device, involves providing third group metal-organic source mixed precursor.

WANG G, YAN Q