国家/地区 美国（3）
IPC部 B（4）
IPC大类 C23（4）
IPC小类 C23C（4）
IPC B82Y040/00（3） C01B031/02（3） B82Y030/00（2）
C23C016/455（2） C30B029/02（2）
发明人
公开年 2014（4）
申请年 2012（2） 
专利权人

Functionalizing epitaxial graphene sample surface for atomic layer deposition of dielectric in reactor, involves subjecting sample to ex situ functionalization step and sample having hydroxyl-terminated surface to in situ treatment cycle.

GARCES N, WHEELER V D, GASKILL D K, EDDY C R, JERNIGAN G G

Nanosynthesis apparatus, useful for nanosynthesizing graphene, comprises outer tube having internal surface, inner tube partially disposed within outer tube, deposition fluid source in fluid communication with gap, and heater.

HART A J, POLSEN E

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H