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C30(3)
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Direct preparation of graphene/metal or alloy composite material comprises e.g. placing metal or alloy in constant temperature heating area of chemical vapor deposition reaction furnace quartz tube and vacuumizing, inletting protective gas.
FU L, GU J, PANG A, ZHANG X
Controlling nucleation preparation large area single-crystal graphene device comprises a chemical vapor deposition reaction chamber, a reaction gas management system, an exhaust gas management system and a heat source.
LI X
Producing single or multi layered graphene-containing carbon structures on a surface of grains of copper powder and/or its alloy comprises e.g. mixing copper or its alloy powder and inert powder, and annealing at a fluidized temperature.
BABUL T, OBUCHOWICZ Z, KOWALSKI S, BLASZCZYK J
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