国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B035/00（2）
发明人
公开年
申请年 2021（2）
专利权人

Constant temperature device for crystal growth, has connecting block that is fixedly connected with seed crystal rod whose lower end is connected with crystal through straight slot.

YANG J

Preparation of graphite thermal field material surface-coated with tantalum carbide coating for high temperature third-generation semiconductor crystal growth furnace, involves high-pressure water treating graphite surface, plasma spraying tantalum powder, infiltrating graphite, and carbonizing.

TANG B, WU X