国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC
发明人 ZHANG J（2）
公开年 2023（2）
申请年 2022（2） 
专利权人

Processing wafer level single crystal graphene heterojunction by direct growth method, comprises e.g. pre-processing the polycrystalline metal foil to obtain single crystal metal foil, using the crystal orientation inducing method to grow hexagonal boron nitride single crystal domain.

LI Y, WU B, LIANG S, LI S, ZHANG X, HU P, ZHANG J

Preparing enhanced reduction graphene oxide/carbon nanotube/pyrolytic carbon composite material involves subjecting graphene oxide/carbon nanotube foam to high-temperature thermal reduction to obtain reduced graphene oxide/carbon nanotube foam.

SHAO D, WANG S, LI Y, YANG J, JIA X, SONG H, WANG C, WEI P, ZHANG J, DING S, FENG L