国家/地区
IPC部 B（3）
IPC大类 B82（3）
IPC小类 B82Y（3）
IPC B82Y020/00（2）
发明人
公开年 2022（2）
申请年 2021（3）
专利权人

Hydroxide radical generating system comprises up conversion layer including first up-conversion layer and second up-conversion layer, photocatalyst layer, and photonic crystal layer.

KIMHYEONGIL, IN J H

Assembly method of plant device containing lead-free double perovskite quantum dot crystal involves preparing lead-free double perovskite quantum dot crystal, packaging the lead-free double perovskite quantum dot crystal.

CHEN Q, SHI M, ZOU J, JIN D, WAN W, ZHOU Y

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S