国家/地区 中国（2）
IPC部 C（2）
IPC大类 C23（2）
IPC小类 C23C（2）
IPC C30B025/16（2）
发明人
公开年 2022（2）
申请年 2021（2）
专利权人

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J

Preparing transferable large size gallium oxide film involves growing graphene on the copper foil substrate, and then removing copper foil substrate, removing graphene of the copper foil substrate transferred to cleaned sapphire substrate.

HAO Y, MA P, JIAO P, WANG D, ZHANG J, FENG Q, ZHANG Y, NING J