国家/地区
IPC部 B（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/02（2） C30B029/02（2）
发明人
公开年 2014（2）
申请年 2012（2）
专利权人

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H