国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B029/36（2）
发明人
公开年 2016（2）
申请年 2016（2） 
专利权人

Preparation of single-crystal silicon carbide/graphene composite nanofiber used in e.g. nano optoelectronic device, involves heating silicon carbide nanofibers, vacuumizing with vacuum pump, and removing silicon from nanofibers.

CHEN J, DING L

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F