国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B029/02（2）
发明人 CHEN X（2）
公开年 2012（2）
申请年
专利权人

Growing graphene on silicon carbide substrate epitaxially involves adopting formation technology imaging substrate, on surface of substrate, forming graphic array, performing thermal decomposition to patterned substrate and forming graphene.

CHEN X, GUO L, JIA Y, LI K, LIN J, WANG G, WANG W

Method for preparing regular graphene single-crystal domain utilized for graphene apparatus, involves forming aromatic compound as regular graphene single-crystal domain on metal surface by molecule self-assembly technology.

CHEN X, LIU L, LIU S, WANG L