国家/地区 韩国（2）
IPC部 C（3）
IPC大类 C01（3） G01（3）
IPC小类 C01B（3）
IPC C01B031/04（3） G01J001/42（2）
发明人
公开年
申请年 2016（3）
专利权人

Producing graphene structure useful for transistor and photo detectors, comprises e.g. forming an aluminum pattern on a substrate, forming a graphene layer on substrate and aluminum pattern, and depositing a metal layer on graphene layer.

DONG J L, JONG C Y

Complex used in optical sensor, comprises graphene layer and porphyrin layer formed on graphene layer, where porphyrin layer is doped with metal.

LEE S S, AN K S, LIM J, MYUNG S, SONG W, KIM S J

Use of breathable graphene film for detecting light intensity stability, where graphene sheet comprises one to four layers of graphene sheets.

GAO C, PENG L