国家/地区
IPC部 C（2） G（2）
IPC大类 C09（2）
IPC小类 G02B（2）
IPC
发明人
公开年 2023（2）
申请年 2021（2）
专利权人

Method for fabricating two-dimensional channel transistor involves growing hexagonal-boron nitride layer on substrate, selectively etching hexagonal-boron nitride layer by exposing hexagonal-boron nitride layer to sulfur hexafluoride plasma gas, and treating etched layer in potassium hydroxide.

SHRIVASTAVA M, RAWAT J S, MEERSHA A

Composition useful for preparing light-shielding film of smartphone camera module as spacer, washer and coating solution comprises carbon-based particles, thermosetting binder resins, dispersants, polymer beads and solvents.

PARK S C, YUN J H, KIM Y S, KIM Y, PIAO S