国家/地区
IPC部 C（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人
公开年
申请年 2009（2）
专利权人

Epitaxially growing cold cathode field emitting material, i.e. carbon film, on silicon carbide substrate by controlling density and length-width ratio of graphene strip through pressure and temperature in growth process.

WANG G, WANG W, JIA Y, CHEN X, GUO L, LI K, HUANG Q, PENG T, LIN J

Preparing graphene nanoribbons involves providing carbon nanotubes, and reacting carbon nanotubes with oxidant to form oxidized graphene nanoribbons.

HIGGINBOTHAM A, KOSYNKIN D W, PRICE K B, TOUR J M, KOSYNKIN D V, PRICE B K, TOUR J, KOSYNKIN D, DUQUE A, DUGUE A, PRICEHOELSCHER B K