国家/地区 日本（3） 美国（3） 中国（2） 韩国（2） 世界知识产权组织（2）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/02（3） C01B031/04（3） B82Y030/00（2）
B82Y040/00（2） H01B005/14（2） H01B013/00（2）
发明人
公开年 2011（4）
申请年 2010（4）
专利权人

Formation of graphene used for semiconductor device, solar cell and flat panel display device, involves introducing carbon-type gas to surface vicinity of base material and heat processing surface of base material.

NAKASHIMA S, KATO S, UEHARA T, NAKANISHI K, MATSUMOTO M, FUKIDOME H, SUEMITSU M

Manufacture of graphene used for e.g. photovoltaic cell, involves exposing graphite oxide to source of ultraviolet light, visible light and/or infrared radiant energy.

ELSHALL M S, ABDELSAYED V, ALRESAYES S I, ALOTHMAN Z A M, MOUSSA S, MOHAMED M B

Applying a coating composition on substrate comprises preparing a coating by mixing carbon in form of carbon nanotubes, graphene and/or fullerenes with metal particles and two-dimensionally or selectively applying the coating on substrate.

ADLER U, RODE D, BURESCH I, WANG J, FRECKMANN D, SCHMIDT H, ROHDE D, WANG Y

Making graphene comprises preparing graphene member comprising e.g. base member, oxide layer and metal catalyst layer, applying water to graphene member, separating metal catalyst layer from oxide layer and removing metal catalyst layer.

AHN J, HONG B, LEE Y, SONG Y, SONG Y I, AHN J H, LEE Y B, HONG B H, LI R