国家/地区 印度（3）
IPC部 C（5）
IPC大类 C09（5）
IPC小类 H01L（5）
IPC
发明人
公开年 2023（5）
申请年 2021（5）
专利权人

Method for fabricating two-dimensional channel transistor involves growing hexagonal-boron nitride layer on substrate, selectively etching hexagonal-boron nitride layer by exposing hexagonal-boron nitride layer to sulfur hexafluoride plasma gas, and treating etched layer in potassium hydroxide.

SHRIVASTAVA M, RAWAT J S, MEERSHA A

Method for generating white light using white light-emitting quantum dots, involves mixing naphthalene and heteroatom co-doping compound, fabricating heteroatom co-doped graphene quantum dots from obtained mixture, and generating white light using obtained white-light emitting quantum dots.

SAGAR V K, BISHT P B

Black photovoltaic backplane for preparing photovoltaic cell, comprises photovoltaic backplane substrate, black coating and protective layer stacked in sequence.

FENG Z, LU S, WANG Y

Polydimethylsiloxane composite for heat dissipation/flame retardancy in field of automobiles and electrical/electronic comprises metal hydroxide-coated carbon body as filler based on polydimethylsiloxane.

SHIM S E, HWANG S, SO J, LEE K

Improved electromagnetic interference (EMI) shielding composition for synthesizing zinc ferrite nanoparticles ferrites by co-precipitation method, comprises composites containing graphene oxide blended ferrites.

BASU S, NAIR R U, SAHU A K, PATTNAIK S, CHOUDHURY B, MOHAPATRA M