国家/地区 中国（2）
IPC部 G（2） H（2）
IPC大类 G01（2）
IPC小类 G01N（2）
IPC
发明人
公开年 2023（2）
申请年 2023（2）
专利权人

Ferroelectric field effect transistor gas sensor, comprises gate on substrate, and pulse gate voltage applied to gate to regulate polarization direction and strength of ferroelectric dielectric layer, thus realizing regulation of initial state of gas sensitive layer and gas desorption speed.

WANG Y, LIU Y, GUAN K, FENG S, WANG X, LIU L, ZHANG T

Preparing composite flexible electrode of loading catalyst of graphene/single-wall carbon nano-tube, comprises e.g. pumping air pressure in electric arc reaction chamber to vacuum state, and introducing certain amount of protective gas into chamber.

ZHU T, CHANG W, LAI S, JIN L, WU H, WEI Z, JIANG C, RONG L, ZHAO P