国家/地区 韩国（2） 美国（2）
IPC部 H（2）
IPC大类 H01（2） H10（2）
IPC小类 H01L（2）
IPC
发明人
公开年 2023（2）
申请年 2022（2）
专利权人 POSTECH ACADIND FOUND（2）

Three-terminal synaptic device comprises drain electrode provided on substrate and spaced apart from each other, channel layer provided on substrate, source electrode, and drain electrode, ion reservoir layer configured to store active ions, gate electrode provided on ion reservoir layer.

CHOI W, HWANG H, LEE K, KWON J, LEE H, LEE J, NOH S, NOH S J, YI J S, KWON J H, LEE G M, HWANGHYUNSANG

Non-volatile memory device comprises word lines extending in first direction on substrate, and channel pattern provided between first bit line and second bit line of each of bit line pairs on blocking insulating film, where channel pattern has ambipolar conduction characteristic.

PARK K, KANG S, JUNG S, PARK J, JO J, KIM J, SONG W, KANG S H, HYOUNG C J