国家/地区 中国（2）
IPC部 C（2）
IPC大类 C23（2）
IPC小类 C23C（2）
IPC C23C016/511（2）
发明人
公开年 2023（2）
申请年
专利权人

Microwave plasma chemical vapor deposition device, has metal cavity wall arranged around periphery of reaction cavity, where metal cavity wall is configured for shrinking or expanding around reaction cavity.

XU G, LIU F, WU H, AN K

Microwave power synthesis system useful in microwave plasma chemical vapor deposition reaction system in film deposition field, comprises e.g. power synthesis chamber used for synthesizing microwave fed by microwave feed ports after injection locking frequency and injection adjusting phase.

ZHONG N, HUANG M