国家/地区
IPC部 C（2） G（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B032/186（2）
发明人
公开年 2023（2）
申请年
专利权人

Method for fabricating two-dimensional channel transistor involves growing hexagonal-boron nitride layer on substrate, selectively etching hexagonal-boron nitride layer by exposing hexagonal-boron nitride layer to sulfur hexafluoride plasma gas, and treating etched layer in potassium hydroxide.

SHRIVASTAVA M, RAWAT J S, MEERSHA A

Terahertz wave active modulator for use in flexible wearable device, has hexagonal boron nitride whose two sides are respectively provided with first graphene and second graphene, where graphene strip is provided with ion liquid grid.

XIE Y, LI S