国家/地区 中国（2）
IPC部 C（2）
IPC大类 C23（2） H01（2）
IPC小类 C23C（2）
IPC C23C014/16（2）
发明人
公开年 2023（2）
申请年
专利权人

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C

Method for preparing anti-oxidation bonding alloy silver wire containing graphene on surface in microelectronic packaging field, involves using polystyrene as carbon source to grow graphene on surface of copper plating layer to obtain bonded silver wire containing graphene on surface.

LI Y, LI S