国家/地区 中国（7）
IPC部 B（7）
IPC大类 C23（7） B21（4） C01（3）
B32（2） C22（2）
IPC小类 C23C（7） B21J（3） C01B（3）
B32B（2） C22C（2）
IPC C23C016/26（7）
发明人 LI X（7）
公开年 2022（6）
申请年 2022（7）
专利权人 CHINESE ACAD.（6） CHONGQING GR.（6）

Composite current collector useful for enhancing conductivity, comprises e.g. high molecular support layer as central layer, nano-silver wire reinforced conductive layer arranged on both sides, the metal layer and the graphene reinforced conductive layer arranged between the metal layer.

ZHANG G, LI X, XIA J, ZHU Z, WANG S

Metal-graphene laminated composite plate comprises metal layer and graphene layer alternately arranged.

SHAO L, HUANG D, DUAN Y, JIANG H, XU X, YU J, MA J, SHI H, LI X

Growth forging split device for graphene metal composite material, comprises growth chamber, forging chamber and transfer mechanism for transferring metal material, where growth chamber and forging chamber are inside with heating system.

SHAO L, HUANG D, DUAN Y, JIANG H, MA J, XU X, SHI H, LI X, YU J

Preparation device of metal layered graphene on solid carbon source, has heat compression chamber that is provided with auxiliary gas path mechanism introducing auxiliary gas into sample chamber, growth chamber and compression chamber.

SHAO L, LI X, ZHANG Y, LI Z, HUANG D, SHI H, DUAN Y

Growing and forging integrated device of metal composite used for preparing graphene, comprises integrated chamber, where integrated chamber communicates with gas path system, and integrated chamber inside provided with heating system.

SHAO L, HUANG D, DUAN Y, JIANG H, MA J, XU X, YU J, SHI H, LI X

Folding forging method of high conductive graphene composite material by forming graphene and performing forging step alternately and repeatedly.

SHAO L, HUANG D, DUAN Y, JIANG H, XU X, MA J, YU J, SHI H, LI X

Preparing graphene metal layered composite material useful in aerospace industry, aviation industry and information industry, comprises pre-treating solid carbon source, growing graphene on many metal substrates and hot-pressing many graphene metal substrates.

SHAO L, LI X, ZHANG Y, LI Z, HUANG D, SHI H, DUAN Y