国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C23C016/26（4） C01B031/04（3）
发明人 DING G（4）
公开年 2012（4）
申请年 2012（4）
专利权人 CHINESE ACAD.（4） SHANGHAI INS.（3）

Controllable layer number graphene thin film, prepared by preparing germanium-silicon substrate, carburizing and heating copper-nickel composite substrate with carbon source gas.

DING G, JIANG M, XIE X, ZHU Y

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Growing graphene, comprises growing graphene on surface of catalyst using carbon source through chemical vapor deposition, or growing graphene on catalyst surface and interface of catalyst contacting with substrate.

DI Z, DING G, GONG Q, JIANG M, SUN L, WANG S, XIE X, ZHU Y

Method for growing graphene through chemical vapor phase deposition, involves using poly-benzene ring aromatic hydrocarbons as carbon source and using carbon source decomposition method or spin-coating method of carbon source.

DING G, JIANG M, SHEN H, SUN L, TANG S, WU T, XIE X