国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人 DU C（4）
公开年 2015（4）
申请年 2014（4）
专利权人 CHINESE ACAD.（4） CHONGQING MO.（4）

Continuous atmospheric pressure rapid graphene preparing device comprises box body, constant temperature annealing chamber, growing cavity, cooling cavity, clapboard, air inlet pipe, gas mixing room, reacting cavity body and cooling device.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

Transfer of graphene oxide doping by coating growth surface with polymer doped graphene transfer medium, attaching into target substrate, forming composite structure, vacuum pressure processing, heating and separating growth substrate.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

Preparing a graphene film through low-temperature fixed-point nucleating comprises e.g. coating layer of carbon source solution on metal substrate, drying, patterning on metal substrate, graphene nucleating, diffusing and cooling.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

Graphene preparation device includes constant temperature annealing cavity, air inlet pipe, mixed gas chamber, heater, cooling growth chamber, air cooling pipe, second valve, cooling cavity, feeding device and pressure release pipe.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D