国家/地区 中国（4）
IPC部 B（4）
IPC大类 B82（4）
IPC小类 C01B（4）
IPC C01B031/02（4） B82Y030/00（3） C01B031/04（3）
B82B001/00（2） B82B003/00（2） B82Y040/00（2）
C01B031/00（2） H01L029/06（2）
发明人
公开年 2009（2） 2010（2）
申请年 2008（4）
专利权人

Manufacturing carbon nanotube-, fullerene- and/or graphene-containing coating for use as electromechanical component or lead frame, involves applying carbon nano-tubes, fullerene or graphene on tin-containing coating by mechanical treatment.

ADLER U, BURESCH I, PRIGGEMEYER S, RODE D, SCHMIDT H, ROHDE D

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z

Preparation of graphene or graphene dispersion used for manufacturing paper, film, composite and articles for nanoelectronics, nanocomposites and batteries, involves reducing purified exfoliated graphite oxide in presence of base.

LI D, WALLACE G G