国家/地区 欧洲专利局（EPO）（2）
IPC部 C（2）
IPC大类 C01（2） C23（2）
IPC小类 C01B（2）
IPC C01B032/186（2）
发明人 DIJON J（2）
公开年
申请年
专利权人 COMMISSARIAT.（2）

Process for preparing graphene layer with better electrical conductivity, involves doping zone of graphene layer to form doped graphene zone including stabilized sheet resistance, where doping is carried out by surface of graphene layer.

LE POCHE H, CARELLA A, DIJON J, OKUNO H, RAUX E

Forming graphene film comprises placing substrate and carbon source into reaction chamber having gas inlet, and heating carbon source under flow of hydrocarbon-free gas to convert portion of carbon source into graphene film on the substrate.

DIJON J, TYURNINA A