国家/地区 印度（4）
IPC部 A（4）
IPC大类 A61（4）
IPC小类 C01B（4）
IPC C01B032/194（4）
发明人
公开年 2021（2） 2022（2）
申请年 2020（2）  2021（2） 
专利权人

Nitrogen doping in chemical vapor deposition (CVD) graphene, by initiating by controller, and performing annealing process using ammonia gas in pressure chamber on CVD graphene at pre-defined temperature for pre-defined period of time, where pressure chamber is maintained at atmospheric pressure.

SINGLA R, KOTTANTHARAYIL A

Preparing multilayer graphene oxide sheets to protrude entry of corrosive ions onto metal surface, comprises extracting using solvent extraction process, phytocomponents from chopped leaf part of Cardiospermum halicacabum and filtering.

PRIYANKA D, NALINI D

Fabric used to make commercial products e.g. textile products in medical applications e.g. aprons and garments, comprises graphene having antimicrobial, antistatic, anti-odor, wicking, thermal cooling and UV protection.

AMIRTHASAMY J B, LAHA A, RAJE V P, CHOUDRY D R, SHUKLA M K, NIGAM P, REKHI S S, BALACHANDRAN V S, NANDY M, GOSWAMI K

Producing graphene doped with nitrogen and sulfur atoms (N,S- DDG) used for doping graphene oxide with nitrogen and sulfur, involves providing microorganisms of halobacteria class which are strictly anaerobic and sulfite-reducing.

IAKIMOV V