国家/地区 日本（2）
IPC部 B（2）
IPC大类 B01（2）
IPC小类 B01J（2）
IPC
发明人 HAYASHI K（2）
公开年
申请年
专利权人 FUJITSU LTD（2）

Producing multilayer graphene, involves synthesizing multilayer graphene from carbon source using iron-chromium alloy film as catalyst.

HAYASHI K, KONDO O

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K