国家/地区 中国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人 XIE X（2）
公开年
申请年 2019（2）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（2）

Preparing silicon based substrate heterogeneous integrated graphene, comprises e.g. providing silicon based substrate, then forming dielectric layer on surface of the silicon based substrate, depositing graphene film and etching.

OU X, YI A, LIN J, ZHANG S, YU Q, XIE X

Preparing high quality graphene material comprises adding electrolyte solution, graphite raw material and electrode, applying electric field, intercalating of cleavage graphite, washing, removing electrolyte solution and drying.

HE P, DING G, ZHANG P, XIE X