国家/地区 Malaysia（10）
关键词 CARRIER VELOCITY（2） FET（2） GRAPHENE（2）
GRAPHENE NANORIBBON（2）
出版物 JOURNAL OF COMPUTAT.（3） SCIENCE OF ADVANCED.（2）
出版时间 2012（10）
机构 UNIV TEKNOL .（6） UNIV SAINS M.（3）
作者 AHMADI MT（10）

Effect of Graphene Nanoribbons Layers on Its Band Energy and the Electrical Properties

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

LEONG WS, NURUDIN MA, ANWAR S, AHMADI MT, ISMAIL R

Theory of Ionization Mechanism in Graphene Nanoribbons

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

GHADIRY M, BIN ABD MANAF A, NADI M, RAHMANI M, AHMADI MT

Analytical Modeling of Graphene-Based DNA Sensor

SCIENCE OF ADVANCED MATERIALS

KARIMI FAH, AHMADI MT, RAHMANI M, AKBARI E, KIANI MJ, KHALID M

The Effect of Applied Voltage on the Carrier Effective Mass in ABA Trilayer Graphene Nanoribbon

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

RAHMANI M, AHMADI MT, GHADIRY MH, SAMADI J, ANWAR S, ISMAIL R

The Sub-Band Effect on the Graphene Nanoribbon Based Field-Effect Transistor

JOURNAL OF NANOELECTRONICS OPTOELECTRONICS

KIAT WK, AHMADI MT, ISMAIL R

Monolayer Graphene Nanoribbon Homojunction Characteristics

SCIENCE OF ADVANCED MATERIALS

AHMADI MT, RAHMANI M, GHADIRY M, ISMAIL R

Ionization coefficient of monolayer graphene nanoribbon

MICROELECTRONICS RELIABILITY

GHADIRY M, BIN ABD MANAF A, NADI M, RAHMANI M, AHMADI MT

CHANNEL CONDUCTANCE OF ABA STACKING TRILAYER GRAPHENE NANORIBBON FIELD-EFFECT TRANSISTOR

MODERN PHYSICS LETTERS B

SADEGHI H, AHMADI MT, MOUSAVI SM, ISMAIL R

Band energy effect on carrier velocity limit in graphene nanoribbon

JOURNAL OF EXPERIMENTAL NANOSCIENCE

AHMADI MT, JOHARI Z, AMIN NA, ISMAIL R

Modelling and Simulation of Saturation Region in Double Gate Graphene Nanoribbon Transistors

SEMICONDUCTORS

GHADIRY MH, NADI M, RAHMANI M, AHMADI MT, BIN ABD MANAF A