国家/地区 Sweden（6）
关键词 GRAPHENE（4） FIELDEFFECT TRANSIS.（3） MAXIMUM FREQUENCY O.（3）
TRANSIT FREQUENCY（3）
出版物 IEEE TRANSACTIONS O.（2）
出版时间 2020（4） 2017（2）
机构 CHALMERS UNI.（5）
作者 BONMANN M（8）

Does carrier velocity saturation help to enhance f(max) in graphene field-effect transistors?

NANOSCALE ADVANCES

FEIJOO PC, PASADAS F, BONMANN M, ASAD M, YANG XN, GENERALOV A, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J, JIMENEZ D

Direct nanoscopic observation of plasma waves in the channel of a graphene field-effect transistor

LIGHTSCIENCE APPLICATIONS

SOLTANI A, KUSCHEWSKI F, BONMANN M, GENERALOV A, VOROBIEV A, LUDWIG F, WIECHA MM, CIBIRAITE D, WALLA F, WINNERL S, KEHR SC, ENG LM, STAKE J, ROSKOS HG

Effects of Self-Heating on f(T) and f(max) Performance of Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

BONMANN M, KRIVIC M, YANG XX, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J

The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

ASAD M, BONMANN M, YANG XX, VOROBIEV A, JEPPSON K, BANSZERUS L, OTTO M, STAMPFER C, NEUMAIER D, STAKE J

Graphene Field-Effect Transistors With High Extrinsic f(T) and f(max)

IEEE ELECTRON DEVICE LETTERS

BONMANN M, ASAD M, YANG XX, GENERALOV A, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J

Charge carrier velocity in graphene field-effect transistors

APPLIED PHYSICS LETTERS

BONMANN M, VOROBIEV A, ANDERSSON MA, STAKE J

Effect of oxide traps on channel transport characteristics in graphene field effect transistors

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

BONMANN M, VOROBIEV A, STAKE J, ENGSTROM O

Enhanced High-Frequency Performance of Top-Gated Graphene FETs Due to Substrate- Induced Improvements in Charge Carrier Saturation Velocity

IEEE TRANSACTIONS ON ELECTRON DEVICES

ASAD M, JEPPSON KO, VOROBIEV A, BONMANN M, STAKE J