国家/地区 France（4）
关键词
出版物 APPLIED PHYSICS LETTERS（5）
出版时间
机构 UNIV PARIS 1.（4）
作者 BOURNEL A（5）

Graphene nanomesh transistor with high on/off ratio and good saturation behavior

APPLIED PHYSICS LETTERS

BERRADA S, NGUYEN VH, QUERLIOZ D, STMARTIN J, ALARCON A, CHASSAT C, BOURNEL A, DOLLFUS P

Giant effect of negative differential conductance in graphene nanoribbon p-n hetero-junctions

APPLIED PHYSICS LETTERS

NGUYEN VH, MAZZAMUTO F, SAINTMARTIN J, BOURNEL A, DOLLFUS P

Resonant tunneling and negative transconductance in single barrier bilayer graphene structure

APPLIED PHYSICS LETTERS

NGUYEN VH, BOURNEL A, NGUYEN VL, DOLLFUS P

Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder

APPLIED PHYSICS LETTERS

QUERLIOZ D, APERTET Y, VALENTIN A, HUET K, BOURNEL A, GALDINRETAILLEAU S, DOLLFUS P

Proposal for a graphene-based all-spin logic gate

APPLIED PHYSICS LETTERS

SU L, ZHAO WS, ZHANG Y, QUERLIOZ D, ZHANG YG, KLEIN JO, DOLLFUS P, BOURNEL A